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Magnetic field-induced strain and magnetoelectric effects in sandwich composite of ferromagnetic shape memory Ni-Mn-Ga crystal and piezoelectric PVDF polymer

机译:铁磁形状记忆Ni-Mn-Ga晶体和压电PVDF聚合物夹层复合材料中的磁场感应应变和磁电效应

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摘要

A sandwich composite consisting of one layer of ferromagnetic shape memory Ni-Mn-Ga crystal plate bonded between two layers of piezoelectric PVDF polymer film was fabricated, and its magnetic field-induced strain (MFIS) and magnetoelectric (ME) effects were investigated, together with a monolithic Ni-Mn-Ga crystal, as functions of magnetic fields and mechanical load. The load-free dc- and ac-MFISs were 0.35 and 0.05% in the composite, and 5.6 and 0.3% in the monolithic crystal, respectively. The relatively smaller load-free MFISs in the composite than the monolithic crystal resulted from the clamping of martensitic twin-boundary motion in the Ni-Mn-Ga plate by the PVDF films. The largest ME coefficient (αE) was 0.58 V/cm·Oe at a magnetic bias field (H[sub Bias]) of 8.35 kOe under load-free condition. The mechanism of the ME effect originated from the mechanically mediated MFIS effect in the Ni-Mn-Ga plate and piezoelectric effect in the PVDF films. The measured αE–H[sub Bias] responses under different loads showed good agreement with the model prediction.
机译:制备了由两层压电PVDF聚合物膜之间粘结的一层铁磁形状记忆Ni-Mn-Ga晶体板组成的三明治复合材料,并研究了其磁场感应应变(MFIS)和磁电(ME)效应与整体式Ni-Mn-Ga晶体一样,具有磁场和机械负载的作用。复合材料的无负载dc-MFIS和ac-MFIS分别为0.35%和0.05%,单片晶体分别为5.6%和0.3%。复合材料中的无负载MFIS比单块晶体要小,这是由于PVDF薄膜将马氏体双边界运动夹持在Ni-Mn-Ga板中。在无负载条件下,在8.35 kOe的磁偏置场(H [sub Bias])下,最大的ME系数(αE)为0.58 V / cm·Oe。 ME效应的机理源自Ni-Mn-Ga板中的机械介导MFIS效应和PVDF膜中的压电效应。在不同载荷下测得的αE–H [sub Bias]响应与模型预测显示出良好的一致性。

著录项

  • 作者

    Zeng, M; Or, DSW; Chan, HLW;

  • 作者单位
  • 年度 2010
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  • 原文格式 PDF
  • 正文语种 en
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